Renesas Electronics
Renesas NP50N04YUK--AY, Automotive N-Channel MOSFET, 40 V Vdss, 50 A Id, 4.8 mOhm Rds(on) at 10 V, 8-PowerLDFN package, AEC-Q101 qualified.
MOQ 1 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T
| Parameter / Attribute | Specification / Value |
|---|---|
| FET type | N-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 40 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 50A (Tc) |
| Power dissipation | 1W (Ta), 97W (Tc) |
| Operating temperature | 175°C |
| Grade | Automotive |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Qualification | AEC-Q101 |
| Case | 8-PowerLDFN |
| Vgs(th) (Max) @ id | 4V @ 250µA |
| Rds on (Max) @ id, vgs | 4.8mOhm @ 25A, 10V |
| Gate charge (Qg) (Max) @ vgs | 57 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 3200 pF @ 25 V |
The NP50N04YUK-E1-AY: AEC-Q101 qualified N-Channel MOSFET, 40 V drain-source, 50 A continuous drain current.
Housed in an 8-PowerLDFN surface-mount package, 5x5.4 mm. 1 W dissipation at ambient without heatsinking.
