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Renesas Electronics NP50N04YUK-E1-AY

NP50N04YUK-E1-AY N-Channel MOSFET, 40 V, 50 A, AEC-Q101

MPNNP50N04YUK-E1-AY
End of Life

Renesas NP50N04YUK--AY, Automotive N-Channel MOSFET, 40 V Vdss, 50 A Id, 4.8 mOhm Rds(on) at 10 V, 8-PowerLDFN package, AEC-Q101 qualified.

$1.61Ref. price · indicative, final on quote
Packaging8-PowerLDFN
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
  • PayPal buyer protectionPay by T/T, PayPal or Payoneer — card payments covered end to end.

Specifications

NP50N04YUK-E1-AY Technical Specifications
ParameterValue
FET typeN-Channel
Mounting typeSurface Mount
Drain to source voltage40 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C50A (Tc)
Power dissipation1W (Ta), 97W (Tc)
Operating temperature175°C
GradeAutomotive
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
QualificationAEC-Q101
Case8-PowerLDFN
Vgs(th) (Max) @ id4V @ 250µA
Rds on (Max) @ id, vgs4.8mOhm @ 25A, 10V
Gate charge (Qg) (Max) @ vgs57 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds3200 pF @ 25 V

Product details

Automotive N-Channel MOSFET for 12 V / 24 V bus switching

The NP50N04YUK-E1-AY: AEC-Q101 qualified N-Channel MOSFET, 40 V drain-source, 50 A continuous drain current.

Gate charge and switching speed

Total gate charge is 57 nC at 10 V, input capacitance 3200 pF at 25 V drain-source.

Package and footprint

Housed in an 8-PowerLDFN surface-mount package, 5x5.4 mm. 1 W dissipation at ambient without heatsinking.

Frequently asked questions

Is NP50N04YUK--AY RoHS compliant?

Yes, the part is ROHS3 compliant.