NP36P06KDG-E1-AY

Renesas Electronics

Renesas NP36P06KDG--AY, P-Channel MOSFET, 60 V Vdss, 36 A Id, 29.5 mOhm Rds(on) at 10 V, 54 nC gate charge, TO-263-3 (D²Pak) surface mount, 175 °C junction temperature.

Renesas Electronics NP36P06KDG-E1-AY
Download datasheet (PDF)
[IN STOCK] In Stock: 5 pcs
$4.23/ pc

Volume pricing

Buy Now

MOQ 1 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

NP36P06KDG-E1-AY specifications
Parameter / AttributeSpecification / Value
FET typeP-Channel
MountingSurface Mount
Drain to source voltage60 V
Drive voltage (Max rds on, min rds on)4.5V, 10V
Current - continuous drain (Id) @ 25°C36A (Tc)
Power dissipation1.8W (Ta), 56W (Tc)
Operating temperature175°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Vgs(th) (Max) @ id2.5V @ 1mA
Rds on (Max) @ id, vgs29.5mOhm @ 18A, 10V
Gate charge (Qg) (Max) @ vgs54 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds3100 pF @ 10 V

Technical details

NP36P06KDG-E1-AY
[ALLOC] verified
Quote