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Renesas Electronics NP36P04SDG-E1-AY

NP36P04SDG-E1-AY P-Channel MOSFET, 40V, 36A, 17mOhm TO-252

MPNNP36P04SDG-E1-AY
End of Life

Renesas NP36P04SDG--AY, P-Channel MOSFET, 40V Vdss, 36A Id, 17mOhm Rds(on) at 10V, 55nC Qg, TO-252-3 (DPAK) surface mount, 175°C junction temperature.

$1.72Ref. price · indicative, final on quote
Renesas Electronics NP36P04SDG-E1-AY datasheet (PDF)
PackagingTO-252-3, DPAK (2 Leads + Tab), SC-63
RoHSROHS3 Compliant
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

NP36P04SDG-E1-AY specifications
ParameterValue
FET typeP-Channel
MountingSurface Mount
Drain to source voltage40 V
Drive voltage (Max rds on, min rds on)4.5V, 10V
Current - continuous drain (Id) @ 25°C36A (Tc)
Power dissipation1.2W (Ta), 56W (Tc)
Operating temperature175°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-252-3, DPAK (2 Leads + Tab), SC-63
Vgs(th) (Max) @ id2.5V @ 250µA
Rds on (Max) @ id, vgs17mOhm @ 18A, 10V
Gate charge (Qg) (Max) @ vgs55 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds2800 pF @ 10 V

Product details

P-channel 40V, 36A — where the 17 mOhm Rds(on) matters

The NP36P04SDG-E1-AY: The NP36P04SDG--AY: The Renesas NP36P04SDG--AY is a P-Channel power MOSFET in a TO-252 (DPAK) surface-mount package, rated for 40 V drain-to-source and 36 A continuous drain current at the case temperature.

Gate drive and switching — 55 nC Qg at 10 V

Gate charge is 55 nC maximum at 10 V gate-to-source. The input capacitance is 2800 pF at 10 V drain-to-source. At 4.5 V drive the on-resistance will be higher than the 17 mOhm figure at 10 V.

Thermal headroom and package reality

Junction temperature is rated to 175°C.

ROHS3 compliance is confirmed.

Frequently asked questions

Is NP36P04SDG--AY RoHS compliant?

Yes, the NP36P04SDG--AY is ROHS3 compliant.