P-channel 40V, 36A — where the 17 mOhm Rds(on) matters
The NP36P04SDG-E1-AY: The NP36P04SDG--AY: The Renesas NP36P04SDG--AY is a P-Channel power MOSFET in a TO-252 (DPAK) surface-mount package, rated for 40 V drain-to-source and 36 A continuous drain current at the case temperature. The on-resistance is specified at 17 mOhm maximum with an 18 A drain current and 10 V gate drive — this is the conduction-loss figure that drives the thermal budget in a load-switch or low-side P-channel application.
Gate drive and switching — 55 nC Qg at 10 V
Gate charge is 55 nC maximum at 10 V gate-to-source. The input capacitance is 2800 pF at 10 V drain-to-source. The drive voltage range spans 4.5 V to 10 V for the Rds(on) specification. At 4.5 V drive the on-resistance will be higher than the 17 mOhm figure at 10 V.
Thermal headroom and package reality
Junction temperature is rated to 175°C.
Active production, ROHS3 compliant
ROHS3 compliance is confirmed.
