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Renesas Electronics NP35N04YLG-E1-AY
Renesas Electronics

NP35N04YLG-E1-AY N-Channel MOSFET, 40V, 35A, 9.7mOhm

MPNNP35N04YLG-E1-AY
End of Life

Renesas NP35N04YLG--AY, N-Channel MOSFET, 40V Vdss, 35A Id, 9.7mOhm Rds(on) @ 10V, 8-HSON Surface Mount, 175°C Tj max.

$1.66Ref. price · indicative, final on quote
NP35N04YLG-E1-AY datasheet
Packaging8-SMD, Flat Lead Exposed Pad
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
  • PayPal buyer protectionPay by T/T, PayPal or Payoneer — card payments covered end to end.

Specifications

NP35N04YLG-E1-AY Technical Specifications
ParameterValue
FET typeN-Channel
Mounting typeSurface Mount
Drain to source voltage40 V
Drive voltage (Max rds on, min rds on)5V, 10V
Current - continuous drain (Id) @ 25°C35A (Tc)
Power dissipation1W (Ta), 77W (Tc)
Operating temperature175°C
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
Case8-SMD, Flat Lead Exposed Pad
Vgs(th) (Max) @ id2.5V @ 250µA
Rds on (Max) @ id, vgs9.7mOhm @ 17.5A, 10V
Gate charge (Qg) (Max) @ vgs51 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds2850 pF @ 25 V

Product details

40V, 35A N-Channel — the switching MOSFET for 12V/24V rails

The NP35N04YLG-E1-AY: The NP35N04YLG--AY is an N-Channel MOSFET with 40 V drain-to-source breakdown and 35 A continuous drain current.

Rds(on) at 5V and 10V — what the gate drive budget buys

For the full 35 A rating, plan on a 10 V gate supply or a dedicated gate driver.

8-HSON package — thermal pad and layout checklist

The part comes in an 8-HSON flat-lead exposed-pad package. Power dissipation is rated 1 W at ambient and 77 W at case temperature.

Gate charge and switching speed

Total gate charge is 51 nC at 10 V, with input capacitance of 2850 pF at 25 V drain.

Lifecycle status is Active with ROHS3 compliance.

Frequently asked questions

What is the Rds(on) of NP35N04YLG--AY at 5V gate drive?

The datasheet specifies the maximum on-resistance at 9.7 mOhm with 10 V gate drive and 17.5 A drain current. At 5 V gate drive the Rds(on) will be higher than the 10 V figure; the exact value depends on junction temperature and current level. The drive voltage range is listed as 5 V to 10 V, so the part is characterised for both levels.