Dual N-channel MOSFET for automotive load switching
The NP30N06QDK-E1-AY: The NP30N06QDK--AY: The NP30N06QDK--AY is a dual N-channel MOSFET from Renesas, rated for 60 V drain-to-source voltage and 30 A continuous drain current at case temperature 25 °C. The two independent channels share a common 8-PowerLDFN package (8-HSON 5x5.4), making it a compact solution for high-side or low-side switching in automotive power distribution, solenoid drivers, and DC motor bridges.
On-resistance and gate drive — sizing the thermal budget
Maximum on-resistance is 14 mOhm at 15 A drain current with 10 V gate drive. Total gate charge is 38 nC at 10 V.
175 °C junction — under-hood margin
Rated maximum junction temperature is 175 °C, with power dissipation of 1 W at ambient and 59 W at case temperature.
Automotive qualification and compliance
Carries AEC-Q101 qualification and is listed with Automotive grade. It is ROHS3 compliant.
