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Renesas Electronics NP23N06YDG-E1-AY
Renesas Electronics

NP23N06YDG-E1-AY N-Channel MOSFET, 60V 23A

MPNNP23N06YDG-E1-AY
End of Life

Nexperia NP23N06YDG--AY, N-Channel MOSFET, 60V Vdss, 23A continuous drain at 25°C, 27mOhm Rds(on) max at 11.5A, 10V, 41nC gate charge at 10V, 8-HSON surface-mount package.

$0.60109Ref. price · indicative, final on quote
NP23N06YDG-E1-AY datasheet
Packaging8-SMD, Flat Lead Exposed Pad
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
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Specifications

NP23N06YDG-E1-AY Technical Specifications
ParameterValue
FET typeN-Channel
Mounting typeSurface Mount
Drain to source voltage60 V
Drive voltage (Max rds on, min rds on)5V, 10V
Current - continuous drain (Id) @ 25°C23A (Tc)
Power dissipation1W (Ta), 60W (Tc)
Operating temperature175°C (TJ)
PackageTape & Reel (TR)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
Case8-SMD, Flat Lead Exposed Pad
Vgs(th) (Max) @ id2.5V @ 250µA
Rds on (Max) @ id, vgs27mOhm @ 11.5A, 10V
Gate charge (Qg) (Max) @ vgs41 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds1800 pF @ 25 V

Product details

60V, 23A N-channel — the conduction loss floor for a 12V/24V rail

The NP23N06YDG-E1-AY: The NP23N06YDG--AY is a 60V, 23A N-channel MOSFET from Nexperia in an 8-HSON flat-lead package with an exposed thermal pad. The headline Rds(on) of 27 mOhm max at 11.5 A, 10 V sets the conduction loss floor for the design.

Gate charge and drive voltage — sizing the gate driver

Total gate charge at 10 V is 41 nC. The drive voltage range is specified for both 5 V and 10 V logic levels.

Switching loss budget — input capacitance and the Miller plateau

Input capacitance Ciss is 1800 pF max at 25 V Vds. Vgs(th) max is 2.5 V at 250 µA.

Thermal management — 1 W in air, 60 W on a heatsink

Power dissipation is rated 1 W at 25°C ambient in still air (Ta) and 60 W at the case (Tc). The 8-HSON exposed pad is the primary thermal path — the datasheet assumes a copper land area under the pad to achieve the 60 W case rating. In a real layout with 1 oz copper and a 1-inch-square pad area, the effective RthJA lands somewhere between the two extremes. For continuous 11.5 A operation, the 3.6 W conduction loss requires a copper area that keeps the junction below 175°C.

Frequently asked questions

What is the Rds(on) of NP23N06YDG--AY at 10V?

That is the conduction loss spec for the design — at 11.5 A continuous, expect 3.6 W dissipated in the die.

What is the gate charge (Qg) of NP23N06YDG--AY?

This drives the gate-driver average current requirement — at 100 kHz switching, the driver supplies 4.1 mA average to the gate.