Renesas Electronics
Renesas NP15P04SLG--AY, P-Channel MOSFET, 40 V Vdss, 15 A continuous drain, 40 mOhm Rds(on) max at 10 V, TO-252-3 (DPak) surface mount package.
MOQ 1 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T
| Parameter / Attribute | Specification / Value |
|---|---|
| FET type | P-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 40 V |
| Drive voltage (Max rds on, min rds on) | 4.5V, 10V |
| Current - continuous drain (Id) @ 25°C | 15A (Ta) |
| Power dissipation | 1.2W (Ta), 30W (Tc) |
| Operating temperature | 175°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Vgs(th) (Max) @ id | 2.5V @ 250µA |
| Rds on (Max) @ id, vgs | 40mOhm @ 7.5A, 10V |
| Gate charge (Qg) (Max) @ vgs | 23 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 1100 pF @ 10 V |
The NP15P04SLG-E1-AY: NP15P04SLG--AY gate threshold voltage is 2.5 V max at 250 µA drain current, and the recommended drive voltage spans 4.5 V to 10 V.
Maximum junction temperature is 175 °C, with power dissipation rated at 1.2 W in still air at the tab (ambient) and 30 W when the case is held at 25 °C — the DPak tab must be soldered to a sufficient copper area on the PCB to keep the junction below the derating curve.
