Renesas NP109N055PUK--AY N-Channel MOSFET, 55 V Vdss, 110 A continuous drain, 2.2 mOhm Rds(on) at 55 A, 10 V, TO-263-3 D²Pak, 175°C junction temperature, surface mount.
| Parameter | Value |
|---|---|
| FET type | N-Channel |
| Mounting type | Surface Mount |
| Drain to source voltage | 55 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 110A (Tc) |
| Power dissipation | 1.8W (Ta), 250W (Tc) |
| Operating temperature | 175°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Vgs(th) (Max) @ id | 4V @ 250µA |
| Rds on (Max) @ id, vgs | 2.2mOhm @ 55A, 10V |
| Gate charge (Qg) (Max) @ vgs | 189 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 11250 pF @ 25 V |
The NP109N055PUK-E1-AY: Gate charge is 189 nC at 10 V; input capacitance is 11250 pF at 25 V drain-source.
The 250 W power dissipation at case temperature (Tc) assumes the tab is properly heatsunk; the 1.8 W at ambient (Ta) reflects the free-air limit with no heatsink.
It is ROHS3 compliant.
Yes, the NP109N055PUK--AY is listed as ROHS3 compliant.