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NP100P04PDG-E1-AY

Renesas Electronics

Renesas NP100P04PDG--AY, P-Channel Power MOSFET, 40 V Vdss, 100 A continuous drain, 3.5 mOhm Rds(on) at 50 A, 10 V gate drive, TO-263-3 D²Pak surface-mount package, 175 °C junction temperature, ROHS3 compliant.

Renesas Electronics NP100P04PDG-E1-AY
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MOQ 1 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

[ORIGINAL SEALED] [PRE-SHIP HD PHOTOS] [30D WARRANTY · COC] [TRACKED DAP/DDP]

Technical specifications

NP100P04PDG-E1-AY specifications
Parameter / AttributeSpecification / Value
FET typeP-Channel
MountingSurface Mount
Drain to source voltage40 V
Drive voltage (Max rds on, min rds on)4.5V, 10V
Current - continuous drain (Id) @ 25°C100A (Tc)
Power dissipation1.8W (Ta), 200W (Tc)
Operating temperature175°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Vgs(th) (Max) @ id2.5V @ 1mA
Rds on (Max) @ id, vgs3.5mOhm @ 50A, 10V
Gate charge (Qg) (Max) @ vgs320 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds15100 pF @ 10 V

Technical details

The NP100P04PDG-E1-AY: The NP100P04PDG--AY is a P-Channel MOSFET rated for 40 V Vdss and 100 A continuous drain, housed in a TO-263-3 D²Pak surface-mount package.

Thermal limits and derating

Maximum power dissipation is 1.8 W at ambient (Ta) and 200 W at case temperature (Tc). The 100 A continuous rating applies at 25 °C case temperature — derate linearly above that per the datasheet curve.

Gate drive threshold and logic-level compatibility

Maximum threshold voltage is 2.5 V at 1 mA drain current.

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