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Renesas Electronics NP100P04PDG-E1-AY

NP100P04PDG-E1-AY P-Channel MOSFET, 40V 100A TO-263

MPNNP100P04PDG-E1-AY
End of Life

Renesas NP100P04PDG--AY, P-Channel Power MOSFET, 40 V Vdss, 100 A continuous drain, 3.5 mOhm Rds(on) at 50 A, 10 V gate drive, TO-263-3 D²Pak surface-mount package, 175 °C junction temperature, ROHS3 compliant.

$5.19Ref. price · indicative, final on quote
Renesas Electronics NP100P04PDG-E1-AY datasheet (PDF)
PackagingTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
RoHSROHS3 Compliant
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

NP100P04PDG-E1-AY specifications
ParameterValue
FET typeP-Channel
MountingSurface Mount
Drain to source voltage40 V
Drive voltage (Max rds on, min rds on)4.5V, 10V
Current - continuous drain (Id) @ 25°C100A (Tc)
Power dissipation1.8W (Ta), 200W (Tc)
Operating temperature175°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Vgs(th) (Max) @ id2.5V @ 1mA
Rds on (Max) @ id, vgs3.5mOhm @ 50A, 10V
Gate charge (Qg) (Max) @ vgs320 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds15100 pF @ 10 V

Product details

The NP100P04PDG-E1-AY: The NP100P04PDG--AY is a P-Channel MOSFET rated for 40 V Vdss and 100 A continuous drain, housed in a TO-263-3 D²Pak surface-mount package.

Thermal limits and derating

Maximum power dissipation is 1.8 W at ambient (Ta) and 200 W at case temperature (Tc). The 100 A continuous rating applies at 25 °C case temperature — derate linearly above that per the datasheet curve.

Gate drive threshold and logic-level compatibility

Maximum threshold voltage is 2.5 V at 1 mA drain current.

Frequently asked questions

What is the Rds(on) of the NP100P04PDG--AY?

Maximum on-resistance is 3.5 mOhm at 50 A drain current with 10 V gate-source voltage.

Is the NP100P04PDG--AY lead-free and RoHS compliant?

Yes. The NP100P04PDG--AY is ROHS3 compliant.