Renesas Electronics
MOSFET N-Channel, 60 V drain-source, 100 A continuous drain, 4.6 mOhm max Rds(on) at 10 V, TO-220-3 Isolated Tab package, through-hole mount, active production, ROHS3 compliant.
MOQ 1 · Tube · RoHS · EIA-481 · DAP/DDP · T/T
| Parameter / Attribute | Specification / Value |
|---|---|
| FET type | N-Channel |
| Mounting | Through Hole |
| Drain to source voltage | 60 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 100A (Ta) |
| Power dissipation | 1.5W (Ta), 156W (Tc) |
| Operating temperature | 150°C (TJ) |
| Package | Tube |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-220-3 Isolated Tab |
| Rds on (Max) @ id, vgs | 4.6mOhm @ 50A, 10V |
| Gate charge (Qg) (Max) @ vgs | 133 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 7730 pF @ 25 V |
The N0602N-S19-AY: Housed in a TO-220-3 Isolated Tab package with through-hole mounting, the part dissipates up to 156 W at the case (Tc) and 1.5 W in still air (Ta). Maximum junction temperature is 150 °C.
