ISL6700IBZ

Renesas Electronics

Renesas ISL6700IBZ, Half-Bridge Gate Driver, N-Channel MOSFET, Non-Inverting, Independent Channels, 9V ~ 15V Supply, 80V Bootstrap Max, 1.4A/1.3A Peak, 5ns Rise/Fall, -40°C ~ 125°C, 8-SOIC, Tube.

Renesas Electronics ISL6700IBZ
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[IN STOCK] In Stock: 17 pcs
$7.44/ pc

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MOQ 1 · Tube · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

ISL6700IBZ specifications
Parameter / AttributeSpecification / Value
Gate typeN-Channel MOSFET
Input typeNon-Inverting
Channel typeIndependent
MountingSurface Mount
Supply voltage9V ~ 15V
Logic voltage - VIL, VIH0.8V, 2.2V
High side voltage - max (Bootstrap)80 V
Current - peak output (Source, sink)1.4A, 1.3A
Operating temperature-40°C ~ 125°C (TJ)
PackageTube
Case8-SOIC (0.154\", 3.90mm Width)
Number of drivers2
Driven configurationHalf-Bridge
Rise (Fall time)5ns, 5ns

Technical details

Half-bridge driver for 80 V bus rails

The Renesas ISL6700IBZ is a half-bridge gate driver for two N-channel MOSFETs. It handles bootstrap voltages up to 80 V on the high side, with a 9 V to 15 V supply range. Peak output current is rated at 1.4 A source and 1.3 A sink, with typical rise and fall times of 5 ns. The independent channel architecture separates high-side and low-side drive paths.

The 8-SOIC package is a standard hand-solderable footprint — no hot-air rework needed for prototyping or small-batch builds. It comes in a Tube, which is fine for bench work; for reel quantities the order code may differ, so confirm packaging when you quote.

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