ISL55110IRZ-T7A

Renesas Electronics

Renesas ISL55110IRZ-T7A, dual half-bridge power MOSFET driver, 3.5A peak output, 100mA per channel continuous, 5V to 13.2V load supply, 2.7V to 5.5V logic supply, 16-TFQFN exposed pad, -40°C to 150°C junction.

Renesas Electronics ISL55110IRZ-T7A
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MOQ 1 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

ISL55110IRZ-T7A specifications
Parameter / AttributeSpecification / Value
Load typeCapacitive and Resistive
MountingSurface Mount
Voltage - load5V ~ 13.2V
Supply voltage2.7V ~ 5.5V
Current - peak output3.5A
Current - output (Channel)100mA
InterfaceLogic
Operating temperature-40°C ~ 150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
TechnologyPower MOSFET
ApplicationsDigital Imaging
Rds on3Ohm
Case16-TFQFN Exposed Pad
Output configurationHalf Bridge (2)

Technical details

Dual half-bridge driver rated for the hot end of digital imaging

The Renesas ISL55110IRZ-T7A is a dual half-bridge power MOSFET driver built for capacitive and resistive loads in digital imaging applications — think piezoelectric actuator drive in printheads or CCD/CMOS sensor timing generators that need fast, high-current gate drive. It delivers a 3.5 A peak output to slam the MOSFET gates open and closed, while the continuous output per channel is rated at 100 mA — the peak figure is what matters for switching speed; the continuous figure sets the steady-state drive budget for the load.

150°C junction — not a standard temp grade

Rated for operation up to 150°C junction temperature.

Active production — no lifecycle contingency needed

No NRND flag, no last-time-buy window on the horizon. The surface-mount QFN footprint is standard for high-density imaging boards.

Rework note: QFN with a critical pad

The 16-QFN (4x4 mm) package has an exposed pad for thermal and electrical ground connection.

ISL55110IRZ-T7A
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