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Renesas Electronics ISL2111ARTZ-T — Analog & Data Acquisition
Renesas Electronics

ISL2111ARTZ-T Half-Bridge Gate Driver, 3A/4A Peak, 10-TDFN

MPNISL2111ARTZ-T
End of Life

Renesas ISL2111ARTZ-T, half-bridge gate driver for N-channel MOSFETs, 8V-14V supply, 3A source / 4A sink peak output, 114V bootstrap, 9ns rise / 7.5ns fall, -40°C to 125°C, 10-TDFN exposed pad.

$5.65Ref. price · indicative, final on quote
ISL2111ARTZ-T datasheet
Packaging10-WDFN Exposed Pad
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
  • PayPal buyer protectionPay by T/T, PayPal or Payoneer — card payments covered end to end.

Specifications

ISL2111ARTZ-T Technical Specifications
ParameterValue
Gate typeN-Channel MOSFET
Input typeNon-Inverting
Channel typeIndependent
Mounting typeSurface Mount
Voltage8V ~ 14V
Logic voltage - VIL, VIH1.4V, 2.2V
High side voltage - max (Bootstrap)114 V
Current - peak output (Source, sink)3A, 4A
Operating temperature-40°C ~ 125°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Case10-WDFN Exposed Pad
Number of drivers2
Driven configurationHalf-Bridge
Rise (Fall time)9ns, 7.5ns

Product details

Half-bridge driver for N-channel MOSFETs — what it is and where it fits

The Renesas ISL2111ARTZ-T is a half-bridge gate driver for two N-channel MOSFETs. Peak output is 3 A source and 4 A sink.

Switching speed and dead-time planning

Typical rise and fall times are 9 ns and 7.5 ns respectively.

Supply and logic-level compatibility

The driver runs from an 8 V to 14 V supply. Logic input thresholds are 1.4 V (VIL) and 2.2 V (VIH).

Lifecycle and sourcing reality

The ISL2111ARTZ-T is listed as Active with ROHS3 compliance.

Frequently asked questions

What is the output current of ISL2111ARTZ-T?

Peak output current is 3 A source and 4 A sink, which is sufficient to drive the gate of medium-power N-channel MOSFETs in half-bridge topologies.