HIP2103FRTAAZ

Renesas Electronics

Renesas HIP2103FRTAAZ, Half-Bridge Gate Driver, N-Channel MOSFET, Non-Inverting, Independent Channels, 4.5V~14V Supply, 1A Peak Output, 8ns/2ns Rise/Fall, 60V Bootstrap, -40°C~125°C, 8-WDFN Exposed Pad, Tube.

Renesas Electronics HIP2103FRTAAZ
Download datasheet (PDF)
[IN STOCK] In Stock: 4 pcs
$3.22/ pc

Volume pricing

Buy Now

MOQ 1 · Tube · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

HIP2103FRTAAZ specifications
Parameter / AttributeSpecification / Value
Gate typeN-Channel MOSFET
Input typeNon-Inverting
Channel typeIndependent
MountingSurface Mount
Supply voltage4.5V ~ 14V
Logic voltage - VIL, VIH1.63V, 2.06V
High side voltage - max (Bootstrap)60 V
Current - peak output (Source, sink)1A, 1A
Operating temperature-40°C ~ 125°C (TJ)
PackageTube
Case8-WDFN Exposed Pad
Number of drivers2
Driven configurationHalf-Bridge
Rise (Fall time)8ns, 2ns

Technical details

Half-bridge driver for N-channel MOSFETs — 1 A peak, 60 V bootstrap

The Renesas HIP2103FRTAAZ is a half-bridge gate driver for two N-channel MOSFETs. It delivers 1 A peak source and sink current, with 8 ns rise and 2 ns fall times. The high-side bootstrap is rated to 60 V. Logic thresholds are 1.63 V (VIL) and 2.06 V (VIH).

The 1 A peak output current charges and discharges the MOSFET gate. With 8 ns rise and 2 ns fall times, the driver switches medium-power MOSFETs.

Supply range and bootstrap — sizing the rail

The high-side bootstrap is rated to 60 V maximum.

HIP2103FRTAAZ
[ALLOC] verified
Quote