Half-bridge driver for N-channel MOSFETs — 1 A peak, 60 V bootstrap
The Renesas HIP2103FRTAAZ is a half-bridge gate driver for two N-channel MOSFETs. It delivers 1 A peak source and sink current, with 8 ns rise and 2 ns fall times. The high-side bootstrap is rated to 60 V. Operating temperature spans -40°C to 125°C. Logic thresholds are 1.63 V (VIL) and 2.06 V (VIH).
1 A peak drive — what it means for your switching stage
The 1 A peak output current charges and discharges the MOSFET gate. With 8 ns rise and 2 ns fall times, the driver switches medium-power MOSFETs.
Supply range and bootstrap — sizing the rail
The driver operates from a 4.5 V to 14 V supply. The high-side bootstrap is rated to 60 V maximum.
Lifecycle and sourcing — active, no LTB risk
The HIP2103FRTAAZ is listed as Active with ROHS3 compliance.
