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Renesas Electronics HAT2201WP-EL-E

HAT2201WP-EL-E N-Channel MOSFET, 100 V, 15 A, 43 mOhm

MPNHAT2201WP-EL-E
End of Life

Renesas HAT2201WP-EL-E, N-Channel MOSFET, 100 V Vdss, 15 A Id, 43 mOhm Rds(on), 21 nC Qg, 8-PowerWDFN, Surface Mount, Active.

$1.17Ref. price · indicative, final on quote
Packaging8-PowerWDFN
RoHSNot applicable
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

HAT2201WP-EL-E specifications
ParameterValue
FET typeN-Channel
MountingSurface Mount
Drain to source voltage100 V
Current - continuous drain (Id) @ 25°C15A (Ta)
Operating temperature150°C (TJ)
PackageBulk
TechnologyMOSFET (Metal Oxide)
Case8-PowerWDFN
Rds on (Max) @ id, vgs43mOhm @ 7.5A, 10V
Gate charge (Qg) (Max) @ vgs21 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds1450 pF @ 10 V

Product details

100 V, 15 A — the power-switching envelope

That voltage and current combination places it in the sweet spot for 48 V to 72 V bus converters, battery-charger output stages, and motor-drive half-bridges where the DC link sits below 100 V. At 7.5 A the dissipation is about 2.4 W — the 8-PowerWDFN package with exposed pad (8-WPAK) must have adequate copper area on the PCB to keep the junction below the 150 °C maximum.

Total gate charge is 21 nC at 10 V. The 1450 pF input capacitance at 10 V drain-source gives a rough Ciss figure for the driver's peak current requirement during the Miller plateau.

Without that plane the 15 A rating is not sustainable.

Frequently asked questions

What is the Rds(on) of HAT2201WP-EL-E at the rated current?

Maximum on-resistance is 43 mOhm at 7.5 A drain current with 10 V gate-to-source drive. This is the figure to use for conduction loss calculations at the operating point.

What package does HAT2201WP-EL-E use?

The part is supplied in an 8-PowerWDFN surface-mount package, also designated as 8-WPAK by Renesas. It has an exposed thermal pad on the underside.