30 V, 6.3 A N-channel in a TSOT-23-6 — load-switch and DC-DC fit
The HAT2054M-EL-E is a 30 V, 6.3 A N-channel power MOSFET from Renesas in a TSOT-23-6 package. It is specified for surface-mount assembly and targets low-voltage load switching, DC-DC converter rails, and battery management where board space is tight.
31 mOhm on-resistance — conduction loss and gate-drive window
The threshold voltage max is 2.5 V at 1 mA, so a 3.3 V logic gate drive will turn the device on but with higher on-resistance than the 10 V condition — budget the conduction loss accordingly. Input capacitance is 620 pF at 10 V drain-source, which keeps switching losses modest in the 100 kHz–500 kHz range typical of point-of-load converters.
1.05 W dissipation — thermal derating in a small package
Maximum power dissipation is 1.05 W at 25 °C ambient, and the continuous drain current rating of 6.3 A assumes that thermal limit. In practice, the TSOT-23-6 package's junction-to-ambient thermal resistance means the usable current at elevated ambient temperatures drops — derate per the datasheet's thermal curve.