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Renesas Electronics H5N3007FL-M0-E#T2

H5N3007FL-M0-E#T2 N-Channel MOSFET, 300V 15A TO-220FL

MPNH5N3007FL-M0-E#T2
End of Life

N-Channel MOSFET, 300 V drain-to-source voltage, 15 A continuous drain current, 160 mOhm on-resistance at 10 V, TO-220-3 Full Pack package, through-hole mount.

$3.33Ref. price · indicative, final on quote
PackagingTO-220-3 Full Pack
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
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Specifications

H5N3007FL-M0-E#T2 Technical Specifications
ParameterValue
FET typeN-Channel
Mounting typeThrough Hole
Drain to source voltage300 V
Current - continuous drain (Id) @ 25°C15A (Ta)
Power dissipation35W (Tc)
Operating temperature150°C
PackageBulk
Vgs±30V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3 Full Pack
Vgs(th) (Max) @ id4V @ 1mA
Rds on (Max) @ id, vgs160mOhm @ 7.5A, 10V
Gate charge (Qg) (Max) @ vgs80 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds2180 pF @ 25 V

Product details

300 V N-Channel MOSFET in a full-pack TO-220

The H5N3007FL-M0-E#T2 is an N-channel power MOSFET rated for 300 V drain-to-source voltage and 15 A continuous drain current at 25°C. It comes in a TO-220-3 Full Pack package — the fully isolated tab means you can bolt it directly to a heatsink without an insulating pad, which saves assembly time on a rework bench. The 160 mOhm maximum on-resistance at 7.5 A and 10 V gate drive is a solid middle-ground for a 300 V device: conduction losses are manageable in a 35 W dissipation budget, and the full-pack body keeps the heatsink electrically cold. Gate charge is 80 nC at 10 V. Input capacitance is 2180 pF at 25 V drain bias.

Package and mounting

The TO-220-3 Full Pack (supplier device package TO-220FL) is a through-hole part with the metal tab fully encapsulated in epoxy. No exposed drain pad — that is the key difference from a standard TO-220. You do not need a silicone pad or mica washer; the part is electrically isolated to the mounting surface. The thermal path is through the plastic body, so expect higher junction-to-case thermal resistance than a standard TO-220. The 35 W power dissipation at case temperature is the practical limit — derate from there if your ambient is above 25°C. Through-hole mounting uses a mounting screw and thermal grease. The full-pack body is thicker than a standard TO-220 — verify heatsink clip or screw length accommodates the extra plastic.

Thermal and drive considerations

The maximum operating junction temperature is 150°C — standard for a silicon MOSFET. The gate-source voltage is rated ±30 V maximum, which gives good margin against gate-drive overshoot in a noisy switching environment. The 4 V gate threshold at 1 mA drain current means the part is fully enhanced with a 10 V gate drive, but it starts conducting well below that — useful if the gate-drive supply droops during startup.

Sourcing and lifecycle

The H5N3007FL-M0-E#T2 is listed as Active on the manufacturer's product status — no end-of-life notice, no last-time-buy window. It is a current-production part, so you can qualify it into a new BOM without worrying about a forced redesign mid-cycle.

Frequently asked questions

What is the closest pin-compatible alternative to H5N3007FL-M0-E#T2 in this component family?

No pin-compatible alternative is listed in the available records. The part is a standard TO-220-3 Full Pack footprint, so any N-channel MOSFET in the same package with similar voltage and current ratings could be a functional replacement, but verify gate drive and on-resistance against your design margins.