Renesas Electronics
Renesas 71V416S10PHG8, 4Mbit asynchronous SRAM, 256K x 16 organization, 10 ns access time, parallel interface, 3V to 3.6V supply, 0°C to 70°C, 44-TSOP II, Tape & Reel.
MOQ 1 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T
| Parameter / Attribute | Specification / Value |
|---|---|
| Memory type | Volatile |
| Mounting | Surface Mount |
| Supply voltage | 3V ~ 3.6V |
| Memory interface | Parallel |
| Operating temperature | 0°C ~ 70°C (TA) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Technology | SRAM - Asynchronous |
| Access time | 10 ns |
| Memory size | 4Mbit |
| Memory format | SRAM |
| Case | 44-TSOP (0.400\", 10.16mm Width) |
| Memory organization | 256K x 16 |
| Write cycle time - word, page | 10ns |
The Renesas 71V416S10PHG8 is a 4 Mbit asynchronous SRAM organized as 256K x 16. The 10 ns access time keeps the part responsive in cache-tag or DSP scratchpad roles. Supply runs from 3V to 3.6V. The 44-TSOP II footprint is a standard asynchronous SRAM outline.
It belongs in office equipment, telecom indoor racks, test instrumentation, and consumer electronics.
