Renesas Electronics 71V416L10BE — Logic ICs
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RoHS Compliant · Lead-Free EIA-481 Standard

71V416L10BE 4Mbit Async SRAM, 10 ns, 48-CABGA

MPN 71V416L10BE
End of Life Spot Stock · 24-48h Dispatch 100% Original Sealed

Renesas 71V416L10BE, 4Mbit Asynchronous SRAM, 256K x 16 organization, 10 ns access time, 3V ~ 3.6V supply, Parallel interface, 48-TFBGA / 48-CABGA (9x9), 0°C ~ 70°C, Active.

In Stock: 406 pcs
MOQ: 1 pcs
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$4.46 / pc
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$4.46 / ea

406 in stock — maximum per order · 3–4 days lead time

$4.01 / ea from 10 pcs

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[SPEC] Essential Parameters Snapshot Full Specifications (13)
Package / Case 48-TFBGA
Supply Voltage 3V ~ 3.6V
Memory / RAM 4Mbit

Full Technical Specifications

13 Parameters
71V416L10BE specifications
Parameter / AttributeSpecification / Value
Memory typeVolatile
MountingSurface Mount
Supply voltage3V ~ 3.6V
Memory interfaceParallel
Operating temperature0°C ~ 70°C (TA)
PackageBulk
TechnologySRAM - Asynchronous
Access time10 ns
Memory size4Mbit
Memory formatSRAM
Case48-TFBGA
Memory organization256K x 16
Write cycle time - word, page10ns
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Technical Details & Description

10 ns asynchronous SRAM — the fit check for a fast cache line

The 10 ns figure is the cycle time from address change to valid data out — a 100 MHz bus can read it back-to-back with zero dead cycles, but a 133 MHz or faster controller will need a wait state or a pipelined SRAM. The parallel interface is straightforward: assert chip select, address lines, and output enable; data appears on the bus 10 ns later. No refresh logic needed — it's truly asynchronous, so it drops into any memory controller that supports a basic SRAM handshake.

Package and supply — the board-level constraints

The 71V416L10BE comes in a 48-TFBGA (48-CABGA) package with a 9x9 mm body. That's a fine-pitch BGA — 0.75 mm ball pitch typical for this form factor — so the PCB needs via-in-pad or microvias for routing, and rework requires a hot-air station with a BGA nozzle and a stencil for the solder paste.

That removes the immediate obsolescence risk for a BOM line.

Frequently asked questions

What is the difference between the 71V416L10BE and the 71V416L20BE?

The primary difference is the access time: the 71V416L10BE is rated at 10 ns, while the 71V416L20BE is a slower 20 ns variant. Both are 4Mbit asynchronous SRAMs in the same 48-CABGA package with the same pinout, so they are footprint-compatible. The 10 ns part is the faster option for designs that need zero-wait-state operation on a 100 MHz bus; the 20 ns part is a cost-reduction candidate if the system can tolerate the slower access.

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