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Renesas Electronics 71V416L10BE — Logic ICs

71V416L10BE 4Mbit Async SRAM, 10 ns, 48-CABGA

MPN71V416L10BE
End of Life

Renesas 71V416L10BE, 4Mbit Asynchronous SRAM, 256K x 16 organization, 10 ns access time, 3V ~ 3.6V supply, Parallel interface, 48-TFBGA / 48-CABGA (9x9), 0°C ~ 70°C, Active.

$4.46Ref. price · indicative, final on quote
Packaging48-TFBGA
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
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Specifications

71V416L10BE Technical Specifications
ParameterValue
Memory typeVolatile
Mounting typeSurface Mount
Voltage3V ~ 3.6V
Memory interfaceParallel
Operating temperature0°C ~ 70°C (TA)
PackageBulk
TechnologySRAM - Asynchronous
Access time10 ns
Memory size4Mbit
Memory formatSRAM
Case48-TFBGA
Memory organization256K x 16
Write cycle time - word, page10ns

Product details

10 ns asynchronous SRAM — the fit check for a fast cache line

The 10 ns figure is the cycle time from address change to valid data out — a 100 MHz bus can read it back-to-back with zero dead cycles, but a 133 MHz or faster controller will need a wait state or a pipelined SRAM. The parallel interface is straightforward: assert chip select, address lines, and output enable; data appears on the bus 10 ns later. No refresh logic needed — it's truly asynchronous, so it drops into any memory controller that supports a basic SRAM handshake.

Package and supply — the board-level constraints

The 71V416L10BE comes in a 48-TFBGA (48-CABGA) package with a 9x9 mm body. That's a fine-pitch BGA — 0.75 mm ball pitch typical for this form factor — so the PCB needs via-in-pad or microvias for routing, and rework requires a hot-air station with a BGA nozzle and a stencil for the solder paste.

Lifecycle and sourcing posture

That removes the immediate obsolescence risk for a BOM line.

Frequently asked questions

What is the difference between the 71V416L10BE and the 71V416L20BE?

The primary difference is the access time: the 71V416L10BE is rated at 10 ns, while the 71V416L20BE is a slower 20 ns variant. Both are 4Mbit asynchronous SRAMs in the same 48-CABGA package with the same pinout, so they are footprint-compatible. The 10 ns part is the faster option for designs that need zero-wait-state operation on a 100 MHz bus; the 20 ns part is a cost-reduction candidate if the system can tolerate the slower access.