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Renesas Electronics 71V3557S75BG — Memory (DRAM / SRAM / Flash / EEPROM)

71V3557S75BG SRAM 4.5Mbit, 7.5 ns, 119-BGA

MPN71V3557S75BG
End of Life

Renesas 71V3557S75BG, Synchronous SRAM - SDR (ZBT), 4.5 Mbit (128K x 36), 7.5 ns access time, Parallel interface, 3.135V–3.465V supply, 0°C–70°C, 119-PBGA (14x22 mm), Surface Mount.

$5.46Ref. price · indicative, final on quote
Packaging119-BGA
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

71V3557S75BG specifications
ParameterValue
Memory typeVolatile
MountingSurface Mount
Supply voltage3.135V ~ 3.465V
Memory interfaceParallel
Operating temperature0°C ~ 70°C (TA)
PackageBulk
TechnologySRAM - Synchronous, SDR (ZBT)
Access time7.5 ns
Memory size4.5Mbit
Memory formatSRAM
Case119-BGA
Memory organization128K x 36

Product details

Package and mounting — BGA realities

The 119-ball BGA (14x22 mm body) is a fine-pitch array that demands solder-paste stencil design, X-ray inspection, and reflow profiling. No socket exists for prototyping — first-article boards need the BGA placed. The supplier device package is 119-PBGA, and the mounting type is surface mount. For a repair technician: this is not a hand-solderable part; a failed SRAM means board-level rework with a BGA station or scrapping the board.

Frequently asked questions

What is the access time and memory organization of 71V3557S75BG?

Access time is 7.5 ns, and the memory is organized as 128K x 36 bits (4.5 Mbit total).