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Renesas Electronics 2SJ687-ZK-E1-AY

2SJ687-ZK-E1-AY P-Channel MOSFET, 20V 20A, 7mOhm Rds(on)

MPN2SJ687-ZK-E1-AY
End of Life

Renesas 2SJ687-ZK--AY, P-Channel MOSFET, 20 V Vdss, 20 A Id, 7 mOhm Rds(on) at 4.5 Vgs, 57 nC Qg, TO-252 (DPak) surface-mount package.

$2.57Ref. price · indicative, final on quote
Renesas Electronics 2SJ687-ZK-E1-AY datasheet (PDF)
PackagingTO-252-3, DPak (2 Leads + Tab), SC-63
RoHSROHS3 Compliant
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

2SJ687-ZK-E1-AY specifications
ParameterValue
FET typeP-Channel
MountingSurface Mount
Drain to source voltage20 V
Drive voltage (Max rds on, min rds on)2.5V, 4.5V
Current - continuous drain (Id) @ 25°C20A (Tc)
Power dissipation1W (Ta), 36W (Tc)
Operating temperature150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±12V
TechnologyMOSFET (Metal Oxide)
CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Rds on (Max) @ id, vgs7mOhm @ 10A, 4.5V
Gate charge (Qg) (Max) @ vgs57 nC @ 4.5 V
Input capacitance (Ciss) (Max) @ vds4400 pF @ 10 V

Product details

Low-voltage P-channel switch — 7 mOhm at 4.5 V gate drive

The 2SJ687-ZK-E1-AY: The 2SJ687-ZK--AY P-channel MOSFET has a 7 mOhm maximum on-resistance at a 4.5 V gate drive. The 57 nC gate charge at 4.5 V is moderate for a 20 A P-channel in a TO-252 package.

20 V Vdss — confirm the rail voltage plus transients

The 20 V drain-source rating sets a hard ceiling. This part is sized for 5 V, 9 V, or 12 V rails where the maximum transient does not exceed 20 V. It is not a candidate for 24 V or 48 V bus switches — the margin is insufficient. The input capacitance of 4400 pF at 10 V Vds is typical for a 20 A P-channel; it does not impose unusual drive demands at moderate switching frequencies.

TO-252 package — thermal and footprint notes

The TO-252-3 (DPak) surface-mount package with a single exposed tab requires a copper island on the PCB for thermal dissipation. The datasheet specifies 1 W maximum dissipation at ambient (Ta) and 36 W at the case (Tc).

Active production — no end-of-life flags

The 2SJ687-ZK--AY carries an active product status. The part is ROHS3 compliant.

Frequently asked questions

Can 2SJ687-ZK--AY be used in high-frequency switching applications?

The 57 nC gate charge at 4.5 V and 4400 pF input capacitance at 10 V Vds are moderate values. At switching frequencies up to 100 kHz the gate-drive current requirement is about 5.7 mA average, which a standard MOSFET driver can supply. Above 200 kHz the switching losses from the gate charge and output capacitance (Coss, not listed) will dominate the dissipation budget, so the part is best suited for load-switching, OR-ing, and low-to-medium frequency DC-DC converters rather than high-frequency resonant converters.