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Renesas Electronics Corporation 2SK4093TZ-E — Discrete Semiconductors

Renesas Electronics Corporation 2SK4093TZ-E

MPN2SK4093TZ-E
Obsolete
$0.9800Ref. price · indicative, final on quote
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

2SK4093TZ-E specifications
ParameterValue
FET typeN-Channel
MountingThrough Hole
Drain to source voltage250 V
Drive voltage (Max rds on, min rds on)2.5V, 4V
Current - continuous drain (Id) @ 25°C1A (Ta)
Power dissipation900mW (Ta)
Operating temperature150°C (TJ)
PackageTape & Reel (TR)
Vgs±10V
TechnologyMOSFET (Metal Oxide)
CaseTO-226-3, TO-92-3 Long Body
Rds on (Max) @ id, vgs2.6Ohm @ 500mA, 4V
Gate charge (Qg) (Max) @ vgs5.5 nC @ 4 V
Input capacitance (Ciss) (Max) @ vds140 pF @ 25 V