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Panjit International Inc. MMBT5551-AU_R1_000A2 — Discrete Semiconductors

Panjit International Inc. MMBT5551-AU_R1_000A2

MPNMMBT5551-AU_R1_000A2
Active
$0.2800Ref. price · indicative, final on quote
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

MMBT5551-AU_R1_000A2 specifications
ParameterValue
MountingSurface Mount
FET typeNPN
Voltage - collector emitter breakdown160 V
Current - collector (Ic)600 mA
Current - collector cutoff50nA (ICBO)
DC current gain (hFE) (Min) @ ic, vce80 @ 10mA, 5V
Power - max250 mW
Frequency - transition300MHz
Operating temperature-55°C~150°C(TJ)
PackageTape & Reel (TR); Cut Tape (CT)
CaseTO-236-3, SC-59, SOT-23-3
Vce saturation (Max) @ ib, ic200mV @ 5mA, 50mA