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Panjit International Inc. MMBT2222ATB_R1_00001 — Discrete Semiconductors

Panjit International Inc. MMBT2222ATB_R1_00001

MPNMMBT2222ATB_R1_00001
Active
$0.2000Ref. price · indicative, final on quote
Sourced new & surplus through independent channelsAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

MMBT2222ATB_R1_00001 specifications
ParameterValue
MountingSurface Mount
FET typeNPN
Voltage - collector emitter breakdown40 V
Current - collector (Ic)600 mA
Current - collector cutoff10nA
DC current gain (hFE) (Min) @ ic, vce100 @ 150mA, 10V
Power - max225 mW
Frequency300MHz
Operating temperature-55°C~150°C(TJ)
PackageTape & Reel (TR); Cut Tape (CT)
CaseSOT-523
Vce saturation (Max) @ ib, ic1V @ 50mA, 500mA