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Panjit International Inc. BSS123_R1_00001 — Discrete Semiconductors

Panjit International Inc. BSS123_R1_00001

MPNBSS123_R1_00001
Active
$0.2200Ref. price · indicative, final on quote
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

BSS123_R1_00001 specifications
ParameterValue
FET typeN-Channel
MountingSurface Mount
Drain to source voltage100 V
Drive voltage (Max rds on, min rds on)4.5V, 10V
Current - continuous drain (Id) @ 25°C170mA (Ta)
Power dissipation500mW (Ta)
Operating temperature-55°C~150°C(TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-236-3, SC-59, SOT-23-3
Vgs(th) (Max) @ id2.5V @ 250µA
Rds on (Max) @ id, vgs6Ohm @ 170mA, 10V
Gate charge (Qg) (Max) @ vgs1.8 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds45 pF @ 25 V