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Panjit International Inc. BAS16_R1_00001 — Discrete Semiconductors

Panjit International Inc. BAS16_R1_00001

MPNBAS16_R1_00001
Active
$0.1400Ref. price · indicative, final on quote
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

BAS16_R1_00001 specifications
ParameterValue
Diode typeStandard
MountingSurface Mount
Voltage - DC reverse (Vr)75 V
Voltage - forward (Vf) (Max) @ if855 mV @ 10 mA
Current - reverse leakage @ vr1 µA @ 75 V
Current - average rectified250mA
Operating temperature - junction-55°C~150°C
SpeedFast Recovery =< 500ns, > 200mA (Io)
PackageTape & Reel (TR); Cut Tape (CT)
CaseTO-236-3, SC-59, SOT-23-3
Capacitance @ vr,2pF @ 0V, 1MHz
Reverse recovery time6 ns