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Panjit International Inc. 2N7002K_R1_00001 — Discrete Semiconductors

Panjit International Inc. 2N7002K_R1_00001

MPN2N7002K_R1_00001
Active
$0.2100Ref. price · indicative, final on quote
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

2N7002K_R1_00001 specifications
ParameterValue
FET typeN-Channel
MountingSurface Mount
Drain to source voltage60 V
Drive voltage (Max rds on, min rds on)4.5V, 10V
Current - continuous drain (Id) @ 25°C300mA (Ta)
Power dissipation350mW (Ta)
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR) Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-236-3, SC-59, SOT-23-3
Vgs(th) (Max) @ id2.5V @ 250µA
Rds on (Max) @ id, vgs3Ohm @ 500mA, 10V
Gate charge (Qg) (Max) @ vgs0.8 nC @ 5 V
Input capacitance (Ciss) (Max) @ vds35 pF @ 25 V