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Panjit International Inc. 2N7002KDW_R1_00001 — Discrete Semiconductors

Panjit International Inc. 2N7002KDW_R1_00001

MPN2N7002KDW_R1_00001
Active
$0.2400Ref. price · indicative, final on quote
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

2N7002KDW_R1_00001 specifications
ParameterValue
MountingSurface Mount
Drain to source voltage60V
Current - continuous drain (Id) @ 25°C115mA (Ta)
Power - max200mW (Ta)
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR) Cut Tape (CT)
TechnologyMOSFET (Metal Oxide)
Configuration2 N-Channel (Dual)
Case6-TSSOP, SC-88, SOT-363
Vgs(th) (Max) @ id2.5V @ 250µA
Rds on (Max) @ id, vgs3Ohm @ 500mA, 10V
Gate charge (Qg) (Max) @ vgs0.8nC @ 4.5V
Input capacitance (Ciss) (Max) @ vds35pF @ 25V