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Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

2SK3318 specifications
ParameterValue
FET typeN-Channel
MountingThrough Hole
Drain to source voltage600 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C15A (Tc)
Power dissipation3W (Ta), 100W (Tc)
Operating temperature150°C(TJ)
PackageBulk
Vgs±30V
TechnologyMOSFET (Metal Oxide)
CaseTOP-3F
Vgs(th) (Max) @ id4V @ 1mA
Rds on (Max) @ id, vgs460mOhm @ 7.5A, 10V
Input capacitance (Ciss) (Max) @ vds3500 pF @ 20 V