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onsemi STDV3055L104T4G — Discrete Semiconductors

onsemi STDV3055L104T4G

MPNSTDV3055L104T4G
Obsolete
$2.3900Ref. price · indicative, final on quote
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

STDV3055L104T4G specifications
ParameterValue
FET typeN-Channel
MountingSurface Mount
Drain to source voltage60 V
Drive voltage (Max rds on, min rds on)5V
Current - continuous drain (Id) @ 25°C12A (Ta)
Power dissipation1.5W (Ta), 48W (Tj)
Operating temperature-55°C~175°C(TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±15V
TechnologyMOSFET (Metal Oxide)
CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Vgs(th) (Max) @ id2V @ 250µA
Rds on (Max) @ id, vgs104mOhm @ 6A, 5V
Gate charge (Qg) (Max) @ vgs20 nC @ 5 V
Input capacitance (Ciss) (Max) @ vds440 pF @ 25 V