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onsemi STD5407NNT4G — Discrete Semiconductors

onsemi STD5407NNT4G

MPNSTD5407NNT4G
Active
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

STD5407NNT4G specifications
ParameterValue
FET typeN-Channel
MountingSurface Mount
Drain to source voltage40 V
Drive voltage (Max rds on, min rds on)5V, 10V
Current - continuous drain (Id) @ 25°C7.6A (Ta), 38A (Tc)
Power dissipation2.9W (Ta), 75W (Tc)
Operating temperature-55°C ~ 175°C (TJ)
GradeAutomotive
PackageTape & Reel (TR)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
QualificationAEC-Q101
CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Vgs(th) (Max) @ id3.5V @ 250µA
Rds on (Max) @ id, vgs26mOhm @ 20A, 10V
Gate charge (Qg) (Max) @ vgs20 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds1000 pF @ 32 V