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onsemi STD5406NT4G — Discrete Semiconductors

onsemi STD5406NT4G

MPNSTD5406NT4G
Obsolete
$19.6400Ref. price · indicative, final on quote
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

STD5406NT4G specifications
ParameterValue
FET typeN-Channel
MountingSurface Mount
Drain to source voltage40 V
Drive voltage (Max rds on, min rds on)5V, 10V
Current - continuous drain (Id) @ 25°C12.2A (Ta), 70A (Tc)
Power dissipation3W (Ta), 100W (Tc)
Operating temperature-55°C~175°C(TJ)
PackageBulk
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Vgs(th) (Max) @ id3.5V @ 250µA
Rds on (Max) @ id, vgs10mOhm @ 30A, 10V
Gate charge (Qg) (Max) @ vgs45 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds2500 pF @ 32 V