onsemi STD110N02RT4G
MPNSTD110N02RT4G
Obsolete
$1.0300Ref. price · indicative, final on quote
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026
Specifications
| Parameter | Value |
|---|---|
| FET type | N-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 24 V |
| Drive voltage (Max rds on, min rds on) | 4.5V, 10V |
| Current - continuous drain (Id) @ 25°C | 32A (Ta) |
| Power dissipation | 1.5W (Ta), 110W (Tc) |
| Operating temperature | -55°C ~ 175°C (TJ) |
| Package | Tape & Reel (TR) Cut Tape (CT) |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Vgs(th) (Max) @ id | 2V @ 250µA |
| Rds on (Max) @ id, vgs | 4.6mOhm @ 20A, 10V |
| Gate charge (Qg) (Max) @ vgs | 28 nC @ 4.5 V |
| Input capacitance (Ciss) (Max) @ vds | 3440 pF @ 20 V |