onsemi SI6463DQ
MPNSI6463DQ
End of Life
P-CHANNEL MOSFET
$0.43Ref. price · indicative, final on quote
Packaging8-TSSOP (0.173", 4.40mm Width)
RoHSROHS3 Compliant
SeriesPowerTrench®
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026
Specifications
| Parameter | Value |
|---|---|
| Series | PowerTrench® |
| FET type | P-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 20 V |
| Drive voltage (Max rds on, min rds on) | 2.5V, 4.5V |
| Current - continuous drain (Id) @ 25°C | 8.8A (Ta) |
| Power dissipation | 600mW (Ta) |
| Operating temperature | -55°C ~ 150°C (TJ) |
| Package | Bulk |
| Vgs | ±12V |
| Technology | MOSFET (Metal Oxide) |
| Case | 8-TSSOP (0.173\", 4.40mm Width) |
| Vgs(th) (Max) @ id | 1.5V @ 250µA |
| Rds on (Max) @ id, vgs | 12.5mOhm @ 8.8A, 4.5V |
| Gate charge (Qg) (Max) @ vgs | 66 nC @ 4.5 V |
| Input capacitance (Ciss) (Max) @ vds | 5045 pF @ 10 V |