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onsemi SI4532DY — Discrete Semiconductors

onsemi SI4532DY

MPNSI4532DY
Active
$0.8800Ref. price · indicative, final on quote
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

SI4532DY specifications
ParameterValue
FET typeN and P-Channel
MountingSurface Mount
Drain to source voltage30V
Current - continuous drain (Id) @ 25°C3.9A, 3.5A
Power - max900mW
Operating temperature-55°C~150°C(TJ)
PackageTape & Reel (TR); Cut Tape (CT)
FET featureStandard
Case8-SOIC (0.154\", 3.90mm Width)
Vgs(th) (Max) @ id3V @ 250µA
Rds on (Max) @ id, vgs65mOhm @ 3.9A, 10V
Gate charge (Qg) (Max) @ vgs15nC @ 10V
Input capacitance (Ciss) (Max) @ vds235pF @ 10V