SI4532DY

onsemi

onsemi SI4532DY
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[IN STOCK] In Stock: 1,552 pcs
$0.19/ pc

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MOQ 5 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

SI4532DY specifications
Parameter / AttributeSpecification / Value
FET typeN and P-Channel
MountingSurface Mount
Drain to source voltage30V
Current - continuous drain (Id) @ 25°C3.9A, 3.5A
Power - max900mW
Operating temperature-55°C~150°C(TJ)
PackageTape & Reel (TR); Cut Tape (CT)
FET featureStandard
Case8-SOIC (0.154\", 3.90mm Width)
Vgs(th) (Max) @ id3V @ 250µA
Rds on (Max) @ id, vgs65mOhm @ 3.9A, 10V
Gate charge (Qg) (Max) @ vgs15nC @ 10V
Input capacitance (Ciss) (Max) @ vds235pF @ 10V
SI4532DY
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