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onsemi SI4435DY — Discrete Semiconductors

onsemi SI4435DY

MPNSI4435DY
Obsolete
$0.9900Ref. price · indicative, final on quote
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

SI4435DY specifications
ParameterValue
SeriesPowerTrench®
FET typeP-Channel
MountingSurface Mount
Drain to source voltage30 V
Drive voltage (Max rds on, min rds on)4.5V, 10V
Current - continuous drain (Id) @ 25°C8.8A (Ta)
Power dissipation2.5W (Ta)
Operating temperature-55°C ~ 175°C (TJ)
PackageTape & Reel (TR) Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
Case8-SOIC (0.154\", 3.90mm Width)
Vgs(th) (Max) @ id3V @ 250µA
Rds on (Max) @ id, vgs20mOhm @ 8.8A, 10V
Gate charge (Qg) (Max) @ vgs24 nC @ 5 V
Input capacitance (Ciss) (Max) @ vds1604 pF @ 15 V