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onsemi SI4410DY — Discrete Semiconductors

onsemi SI4410DY

MPNSI4410DY
Obsolete
$0.18084Price · pay online now
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$0.18 / ea · total $0.90

1,122 in stock — maximum per order · MOQ 5 · 3–4 days lead time

$0.16 / ea from 50 pcs

Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Sep 2026

Specifications

SI4410DY specifications
ParameterValue
SeriesPowerTrench®
FET typeN-Channel
MountingSurface Mount
Drain to source voltage30 V
Drive voltage (Max rds on, min rds on)4.5V, 10V
Current - continuous drain (Id) @ 25°C10A (Ta)
Power dissipation2.5W (Ta)
Operating temperature-55°C~150°C(TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
Case8-SOIC (0.154\", 3.90mm Width)
Vgs(th) (Max) @ id1V @ 250µA
Rds on (Max) @ id, vgs13.5mOhm @ 10A, 10V
Gate charge (Qg) (Max) @ vgs60 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds1350 pF @ 15 V