SBAS16HT3G

onsemi

DIODE GEN PURP 100V 200MA SOD323

onsemi SBAS16HT3G
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MOQ 5 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

SBAS16HT3G specifications
Parameter / AttributeSpecification / Value
MountingSurface Mount
Voltage - DC reverse (Vr)100 V
Voltage - forward (Vf) (Max) @ if1.25 V @ 150 mA
Current - reverse leakage @ vr1 µA @ 100 V
Current - average rectified200mA
Operating temperature - junction-55°C ~ 150°C
SpeedSmall Signal =< 200mA (Io), Any Speed
PackageTape & Reel (TR); Cut Tape (CT)
TechnologyStandard
CaseSC-76, SOD-323
Capacitance @ vr,2pF @ 0V, 1MHz
Reverse recovery time6 ns
SBAS16HT3G
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