NVMYS2D2N06CLTWG
onsemi
MOSFET N-CH 60V 31A/185A LFPAK4
[IN STOCK] In Stock: 5 pcs
MOQ 1 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T
Technical specifications
| Parameter / Attribute | Specification / Value |
|---|---|
| FET type | N-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 60 V |
| Drive voltage (Max rds on, min rds on) | 4.5V, 10V |
| Current - continuous drain (Id) @ 25°C | 31A (Ta), 185A (Tc) |
| Power dissipation | 3.9W (Ta), 134W (Tc) |
| Operating temperature | -55°C ~ 175°C (TJ) |
| Grade | Automotive |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Qualification | AEC-Q101 |
| Case | SOT-1023, 4-LFPAK |
| Vgs(th) (Max) @ id | 2V @ 180µA |
| Rds on (Max) @ id, vgs | 1.9mOhm @ 50A, 10V |
| Gate charge (Qg) (Max) @ vgs | 69 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 4850 pF @ 25 V |
NVMYS2D2N06CLTWG
[ALLOC] verified