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onsemi NVMYS013N08LHTWG — Discrete Semiconductors

onsemi NVMYS013N08LHTWG

MPNNVMYS013N08LHTWG
End of Life

T8 80V LL LFPAK

$1.1Ref. price · indicative, final on quote
PackagingSOT-1023, 4-LFPAK
RoHSROHS3 Compliant
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

NVMYS013N08LHTWG specifications
ParameterValue
FET typeN-Channel
MountingSurface Mount
Drain to source voltage80 V
Drive voltage (Max rds on, min rds on)4.5V, 10V
Current - continuous drain (Id) @ 25°C11A (Ta), 42A (Tc)
Power dissipation3.6W (Ta), 54W (Tc)
Operating temperature-55°C ~ 175°C (TJ)
GradeAutomotive
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
QualificationAEC-Q101
CaseSOT-1023, 4-LFPAK
Vgs(th) (Max) @ id2V @ 45µA
Rds on (Max) @ id, vgs13.1mOhm @ 10A, 10V
Gate charge (Qg) (Max) @ vgs17 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds906 pF @ 40 V