NVMTSC1D3N08M7TXG

onsemi

MOSFET N-CH 80V 46A/348A 8DFNW

onsemi NVMTSC1D3N08M7TXG
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MOQ 1 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

NVMTSC1D3N08M7TXG specifications
Parameter / AttributeSpecification / Value
FET typeN-Channel
MountingSurface Mount
Drain to source voltage80 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C46A (Ta), 348A (Tc)
Power dissipation5.1W (Ta), 287W (Tc)
Operating temperature-55°C ~ 175°C (TJ)
GradeAutomotive
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
QualificationAEC-Q101
Case8-PowerTDFN
Vgs(th) (Max) @ id4V @ 250µA
Rds on (Max) @ id, vgs1.25mOhm @ 80A, 10V
Gate charge (Qg) (Max) @ vgs196 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds14530 pF @ 40 V
NVMTSC1D3N08M7TXG
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