NVMFS6H864NWFT1G

onsemi · Automotive, AEC-Q101 Series

MOSFET N-CH 80V 6.7A/21A 5DFN

onsemi NVMFS6H864NWFT1G
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MOQ 1 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

NVMFS6H864NWFT1G specifications
Parameter / AttributeSpecification / Value
SeriesAutomotive, AEC-Q101
FET typeN-Channel
MountingSurface Mount, Wettable Flank
Drain to source voltage80 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C6.7A (Ta), 21A (Tc)
Power dissipation3.5W (Ta), 33W (Tc)
Operating temperature-55°C ~ 175°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
Case8-PowerTDFN, 5 Leads
Vgs(th) (Max) @ id4V @ 20µA
Rds on (Max) @ id, vgs32mOhm @ 5A, 10V
Gate charge (Qg) (Max) @ vgs6.9 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds370 pF @ 40 V
NVMFS6H864NWFT1G
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