NVMFD6H840NLT1G

onsemi · Automotive, AEC-Q101 Series

T8 80V LL SO8FL DS

onsemi NVMFD6H840NLT1G
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MOQ 1 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

NVMFD6H840NLT1G specifications
Parameter / AttributeSpecification / Value
SeriesAutomotive, AEC-Q101
FET type2 N-Channel (Dual)
MountingSurface Mount
Drain to source voltage80V
Current - continuous drain (Id) @ 25°C14A (Ta), 74A (Tc)
Operating temperature-55°C ~ 175°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
FET featureStandard
Case8-PowerTDFN
Vgs(th) (Max) @ id2V @ 96µA
Rds on (Max) @ id, vgs6.9mOhm @ 20A, 10V
Gate charge (Qg) (Max) @ vgs32nC @ 10V
Input capacitance (Ciss) (Max) @ vds2002pF @ 40V
NVMFD6H840NLT1G
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