NVMFD5C674NLT1G

onsemi

MOSFET 2N-CH 60V 11A/42A 8DFN

onsemi NVMFD5C674NLT1G
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MOQ 1 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

NVMFD5C674NLT1G specifications
Parameter / AttributeSpecification / Value
MountingSurface Mount
Drain to source voltage60V
Current - continuous drain (Id) @ 25°C11A (Ta), 42A (Tc)
Power - max3W (Ta), 37W (Tc)
Operating temperature-55°C ~ 175°C (TJ)
GradeAutomotive
PackageTape & Reel (TR); Cut Tape (CT)
TechnologyMOSFET (Metal Oxide)
Configuration2 N-Channel (Dual)
QualificationAEC-Q101
Case8-PowerTDFN
Vgs(th) (Max) @ id2.2V @ 25µA
Rds on (Max) @ id, vgs14.4mOhm @ 10A, 10V
Gate charge (Qg) (Max) @ vgs4.7nC @ 4.5V
Input capacitance (Ciss) (Max) @ vds640pF @ 25V
NVMFD5C674NLT1G
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