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onsemi NVMD4N03R2G

onsemi NVMD4N03R2G

MPNNVMD4N03R2G
End of Life

MOSFET 2N-CH 30V 4A 8SOIC

$1.3Ref. price · indicative, final on quote
Packaging8-SOIC (0.154", 3.90mm Width)
RoHSROHS3 Compliant
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

NVMD4N03R2G specifications
ParameterValue
MountingSurface Mount
Drain to source voltage30V
Current - continuous drain (Id) @ 25°C4A
Power - max2W
Operating temperature-55°C ~ 150°C (TJ)
GradeAutomotive
PackageTape & Reel (TR); Cut Tape (CT)
TechnologyMOSFET (Metal Oxide)
FET featureLogic Level Gate
Configuration2 N-Channel (Dual)
QualificationAEC-Q101
Case8-SOIC (0.154\", 3.90mm Width)
Vgs(th) (Max) @ id3V @ 250µA
Rds on (Max) @ id, vgs60mOhm @ 4A, 10V
Gate charge (Qg) (Max) @ vgs16nC @ 10V
Input capacitance (Ciss) (Max) @ vds400pF @ 20V