NVJS4151PT1G

onsemi · Automotive, AEC-Q101 Series

MOSFET P-CH 20V 3.2A SC88

onsemi NVJS4151PT1G
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MOQ 1 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

NVJS4151PT1G specifications
Parameter / AttributeSpecification / Value
SeriesAutomotive, AEC-Q101
FET typeP-Channel
MountingSurface Mount
Drain to source voltage20 V
Drive voltage (Max rds on, min rds on)1.5V, 4.5V
Current - continuous drain (Id) @ 25°C3.2A (Ta)
Power dissipation1.2W (Ta)
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±12V
TechnologyMOSFET (Metal Oxide)
Case6-TSSOP, SC-88, SOT-363
Vgs(th) (Max) @ id1.2V @ 250µA
Rds on (Max) @ id, vgs67mOhm @ 2.9A, 4.5V
Gate charge (Qg) (Max) @ vgs10 nC @ 4.5 V
Input capacitance (Ciss) (Max) @ vds850 pF @ 10 V
NVJS4151PT1G
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