NVF2955T1G

onsemi

MOSFET P-CH 60V 2.6A SOT223

onsemi NVF2955T1G
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[IN STOCK] In Stock: 1,061 pcs
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MOQ 1 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

NVF2955T1G specifications
Parameter / AttributeSpecification / Value
FET typeP-Channel
MountingSurface Mount
Drain to source voltage60 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C2.6A (Ta)
Power dissipation1W (Ta)
Operating temperature-55°C ~ 175°C (TJ)
GradeAutomotive
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
QualificationAEC-Q101
CaseTO-261-4, TO-261AA
Vgs(th) (Max) @ id4V @ 1mA
Rds on (Max) @ id, vgs170mOhm @ 750mA, 10V
Gate charge (Qg) (Max) @ vgs14.3 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds492 pF @ 25 V
NVF2955T1G
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