NVD5C684NLT4G

onsemi

MOSFET N-CHANNEL 60V 38A DPAK

onsemi NVD5C684NLT4G
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MOQ 1 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

NVD5C684NLT4G specifications
Parameter / AttributeSpecification / Value
FET typeN-Channel
MountingSurface Mount
Drain to source voltage60 V
Drive voltage (Max rds on, min rds on)4.5V, 10V
Current - continuous drain (Id) @ 25°C38A (Tc)
Power dissipation27W (Tc)
Operating temperature-55°C ~ 175°C (TJ)
GradeAutomotive
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
QualificationAEC-Q101
CaseTO-252-3, DPAK (2 Leads + Tab), SC-63
Vgs(th) (Max) @ id2.1V @ 250µA
Rds on (Max) @ id, vgs16.5mOhm @ 15A, 10V
Gate charge (Qg) (Max) @ vgs4.6 nC @ 4.5 V
Input capacitance (Ciss) (Max) @ vds700 pF @ 25 V
NVD5C684NLT4G
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