NTZS3151PT1G
onsemi
MOSFET P-CH 20V 860MA SOT563
[IN STOCK] In Stock: 3,157 pcs
MOQ 5 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T
Technical specifications
| Parameter / Attribute | Specification / Value |
|---|---|
| FET type | P-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 20 V |
| Drive voltage (Max rds on, min rds on) | 1.8V, 4.5V |
| Current - continuous drain (Id) @ 25°C | 860mA (Ta) |
| Power dissipation | 170mW (Ta) |
| Operating temperature | -55°C ~ 150°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | ±8V |
| Technology | MOSFET (Metal Oxide) |
| Case | SOT-563, SOT-666 |
| Vgs(th) (Max) @ id | 1V @ 250µA |
| Rds on (Max) @ id, vgs | 150mOhm @ 950mA, 4.5V |
| Gate charge (Qg) (Max) @ vgs | 5.6 nC @ 4.5 V |
| Input capacitance (Ciss) (Max) @ vds | 458 pF @ 16 V |
NTZS3151PT1G
[ALLOC] verified