NTZD5110NT1G
onsemi
MOSFET 2N-CH 60V 0.294A SOT563
[IN STOCK] In Stock: 48 pcs
MOQ 1 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T
Technical specifications
| Parameter / Attribute | Specification / Value |
|---|---|
| Mounting | Surface Mount |
| Drain to source voltage | 60V |
| Current - continuous drain (Id) @ 25°C | 294mA |
| Power - max | 250mW |
| Operating temperature | -55°C ~ 150°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Technology | MOSFET (Metal Oxide) |
| FET feature | Logic Level Gate |
| Configuration | 2 N-Channel (Dual) |
| Case | SOT-563, SOT-666 |
| Vgs(th) (Max) @ id | 2.5V @ 250µA |
| Rds on (Max) @ id, vgs | 1.6Ohm @ 500mA, 10V |
| Gate charge (Qg) (Max) @ vgs | 0.7nC @ 4.5V |
| Input capacitance (Ciss) (Max) @ vds | 24.5pF @ 20V |
NTZD5110NT1G
[ALLOC] verified